Datasheet > GT10Q101_06

GT10Q101_06

更新时间： 2024-09-10 03:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管
页数	文件大小	规格书
6页	179K
描述
Silicon N Channel IGBT High Power Switching Applications

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GT10Q101_06 数据手册

GT10Q101

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT10Q101

High Power Switching Applications

Unit: mm

•

Third-generation IGBT

Enhancement mode type

High speed: t = 0.32 µs (max)

Low saturation voltage: V

= 2.7 V (max)

CE (sat)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

1200

±20

CES

GES

Collector current

1 ms

Collector power dissipation

(Tc = 25°C)

140

JEDEC

JEITA

―

Junction temperature

Storage temperature range

150

°C

stg

−55~150

TOSHIBA

2-16C1C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 4.6 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Marking

TOSHIBA

GT10Q101

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-10-31

12 3 4 5 6

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