是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.23 | Is Samacsys: | N |
其他特性: | HIGH SPEED | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最大降落时间(tf): | 320 ns |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 140 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 500 ns |
标称接通时间 (ton): | 300 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT10Q101_06 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT High Power Switching Applications | |
GT10Q301 | TOSHIBA |
获取价格 |
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS | |
GT10Q311 | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
GT10S | ETC |
获取价格 |
PNEUMATIC TURBINE VIBRATIORS | |
GT10S-16DS-CV | HRS |
获取价格 |
Subminiature ECU Interface Connectors | |
GT10S-16DS-HU | HRS |
获取价格 |
Subminiature ECU Interface Connectors | |
GT10S-16DS-HU(24) | HRS |
获取价格 |
Telecom and Datacom Connector | |
GT10SC-2022PCF | HRS |
获取价格 |
Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines | |
GT1-1/1PP-HU | HRS |
获取价格 |
Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines | |
GT1-1/1PP-HU(10) | HRS |
获取价格 |
Rectangular Connector |