Datasheet > GT10PI120T5H

GT10PI120T5H

更新时间： 2024-09-11 17:15:43

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
11页	819K
描述
PIM IGBT-1200V

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中文翻译

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数据手册

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GT10PI120T5H 数据手册

GT10PI120T5H

IGBT Module

Features：

Short Circuit Rated >10μs

Low Saturation Voltage: V_{CE (sat)}= 1.90V @ I_C= 10A , T_C=25℃

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Industrial Inverters

Servo Applications

IGBT, Inverter

Maximum Rated Values (T_C=25℃ unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

1200

±20

T_C= 80℃,

T_C= 25℃

T_J= 175℃

Continuous Collector Current

I_C

I_CM(1)

t_SC

Peak Collector Current Repetitive

Short Circuit Withstand Time

>10

155

μs

T_C= 25℃

P_D

Maximum Power Dissipation per IGBT

_Jmax=175℃

www.njsme.com

Page 1 Rev. A

07/07/2019

12 3 4 5 6 7...11

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