Datasheet > GT10J312_06

GT10J312_06

更新时间： 2024-09-10 03:39:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管高功率电源
页数	文件大小	规格书
7页	509K
描述
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

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中文翻译

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数据手册

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GT10J312_06 数据手册

GT10J312,GT10J312(SM)

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT10J312, GT10J312(SM)

HIGH POWER SWITCHING APPLICATIONS

Unit: mm

MOTOR CONTROL APPLICATIONS

z Third-generation IGBT

z Enhancement mode type

z High speed

: t = 0.30μs (Max.)

z Low saturation voltage

: V

= 2.7V (Max.)

CE (sat)

z FRD included between emitter and collector

Absolute Maximum Ratings (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector−Emitter Voltage

Gate−Emitter Voltage

600

±20

CES

GES

1ms

JEDEC

JEITA

―

Collector Current

Emitter−Collector Forward

Current

TOSHIBA

2−10S1C

1ms

Weight: 1.5 g (typ.)

Collector Power Dissipation

(Tc = 25°C)

Junction Temperature

150

°C

Storage Temperature Range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Equivalent Circuit

Marking

JEDEC

JEITA

―

10J312

Part No. (or abbreviation code)

Lot No.

TOSHIBA

2−10S2C

Weight: 1.4 g (typ.)

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-10-31

12 3 4 5 6 7

中文翻译

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