生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X4 |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 1200 A |
集电极-发射极最大电压: | 1700 V | 配置: | COMPLEX |
JESD-30 代码: | R-XUFM-X4 | 元件数量: | 2 |
端子数量: | 4 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1810 ns | 标称接通时间 (ton): | 960 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ1200R17KE3 | EUPEC |
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IGBT-Wechselrichter / IGBT-inverter | |
FZ1200R17KE3_B2 | EUPEC |
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IGBT-modules | |
FZ1200R17KE3B2NOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FZ1200R17KF4 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | |
FZ1200R17KF6B2 | EUPEC |
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Hochstzulassige Werte / Maximum rated values | |
FZ1200R17KF6CB2 | EUPEC |
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Hochstzulassige Werte / Maximum rated values | |
FZ1200R17KF6CB2V | ETC |
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IGBT Module | |
FZ1200R33HE3 | INFINEON |
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IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled3 diode | |
FZ1200R33HE3BPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel, MODULE-9 | |
FZ1200R33KF1 | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 1.2KA I(C) |