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FZ1200R33KF2-B5 PDF预览

FZ1200R33KF2-B5

更新时间: 2024-11-17 22:41:15
品牌 Logo 应用领域
EUPEC
页数 文件大小 规格书
9页 186K
描述
Hochstzulassige Werte / Maximum rated values

FZ1200R33KF2-B5 数据手册

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Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
VCES  
V
V
A
A
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
3300  
3300  
Tvj = 25°C  
Tvj = -25°C  
VCES  
IC,nom.  
IC  
1200  
2000  
Kollektor-Dauergleichstrom  
DC-collector current  
T
C = 80°C  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
ICRM  
2400  
14,7  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
1200  
2400  
444  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
k A2s  
kW  
kV  
kV  
VR = 0V, tp = 10ms, Tvj = 125°C  
Spitzenverlustleistung der Diode  
maximum power dissipation diode  
T
vj = 125°C  
PRQM  
VISOL  
VISOL  
1200  
10,2  
Isolations-Prüfspannung  
insulation test voltage  
RMS, f = 50 Hz, t = 1 min.  
Teilentladungs-Aussetzspannung  
partial discharge extinction voltage  
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)  
5,1  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1200A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
3,40  
4,25  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 1200A, VGE = 15V, Tvj = 125°C  
-
4,30  
5,00  
Gate-Schwellenspannung  
gate threshold voltage  
IC = 120 mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
Cies  
Cres  
QG  
4,2  
5,1  
150  
8
6,0  
V
Eingangskapazität  
input capacitance  
f = 1MHz, Tvj = 25°C, VCE = 25V, VGE = 0V  
f = 1MHz, Tvj = 25°C, VCE = 25V, VGE = 0V  
VGE = -15V ... + 15V  
-
-
-
-
-
-
nF  
nF  
µC  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
-
-
Gateladung  
gate charge  
22  
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
V
CE = 3300V, VGE = 0V, Tvj = 25°C  
CE = 0V, VGE = 20V, Tvj = 25°C  
ICES  
5
Gate-Emitter Reststrom  
gate-emitter leakage current  
V
IGES  
-
400  
prepared by: Alfons Wiesenthal  
approved by: Christoph Lübke  
date of publication : 2002-10-31  
revision: 2.0  
DB_FZ1200R33KF2 B5_2.0.xls  
1 (9)  

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VGE = 25 V