Datasheet > FZ1200R33KL2C-B5

FZ1200R33KL2C-B5

更新时间： 2024-11-20 22:40:59

品牌	Logo	应用领域
EUPEC		双极性晶体管
页数	文件大小	规格书
8页	275K
描述
IGBT-Wechselrichter / IGBT-inverter

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FZ1200R33KL2C-B5 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FZ1200R33KL2C_B5

Vorläufige Daten

preliminary data

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

TÝÎ = -25°C

3300

V†Š»

3300

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

1200

2300

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms, T† = 80°C

I†ç¢

PÚÓÚ

2400

14,5

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/-20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 1200 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

3,00 3,65

3,70 4,45

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 120 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V, V†Š = 1800V

TÝÎ = 25°C

4,2

5,1

6,0

µC

Gateladung

gate charge

22,0

0,42

145

8,00

Interner Gatewiderstand

internal gate resistor

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 3300 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

I†Š»

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

I•Š»

tÁ ÓÒ

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 1200 A, V†Š = 1800 V

V•Š = ±15 V

R•ÓÒ = 4,7 Â, C•Š = 330 nF

TÝÎ = 25°C

TÝÎ = 125°C

1,00

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 1200 A, V†Š = 1800 V

V•Š = ±15 V

R•ÓÒ = 4,7 Â, C•Š = 330 nF

TÝÎ = 25°C

TÝÎ = 125°C

0,40

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 1200 A, V†Š = 1800 V

V•Š = ±15 V

R•ÓËË = 4,7 Â, C•Š = 330 nF

TÝÎ = 25°C

TÝÎ = 125°C

3,70

3,90

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 1200 A, V†Š = 1800 V

V•Š = ±15 V

R•ÓËË = 4,7 Â, C•Š = 330 nF

TÝÎ = 25°C

TÝÎ = 125°C

0,25

0,35

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 1200 A, V†Š = 1800 V, dI/dt = 5400 A/µs TÝÎ = 25°C

TÝÎ = 125°C

2400

3150

V•Š = ±15 V, L» = 60 nH

R•ÓÒ = 2,0 Â, C•Š = 330 nF

EÓÒ

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 1200 A, V†Š = 1800 V

V•Š = ±15 V, L» = 60 nH

R•ÓËË = 4,7 Â, C•Š = 330 nF

TÝÎ = 25°C

TÝÎ = 125°C

1400

1900

EÓËË

Kurzschlußverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎ = 125°C, V†† = 2500 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

5200

9,00

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

8,50 K/kW

K/kW

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

RÚÌ†™

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Karl-Heinz Hoppe

approved by: Thomas Schütze

date of publication: 2004-4-8

revision: 2.1

12 3 4 5 6 7 8

中文翻译

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