5秒后页面跳转
FZ1500R33HE3 PDF预览

FZ1500R33HE3

更新时间: 2024-11-05 10:28:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
9页 470K
描述
IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode

FZ1500R33HE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:MODULE-9针数:9
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.64Is Samacsys:N
外壳连接:ISOLATED集电极-发射极最大电压:3300 V
配置:COMPLEX门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X5元件数量:3
端子数量:5最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):14500 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):3550 ns标称接通时间 (ton):1150 ns
Base Number Matches:1

FZ1500R33HE3 数据手册

 浏览型号FZ1500R33HE3的Datasheet PDF文件第2页浏览型号FZ1500R33HE3的Datasheet PDF文件第3页浏览型号FZ1500R33HE3的Datasheet PDF文件第4页浏览型号FZ1500R33HE3的Datasheet PDF文件第5页浏览型号FZ1500R33HE3的Datasheet PDF文件第6页浏览型号FZ1500R33HE3的Datasheet PDF文件第7页 
Technische Information / technical information  
FZ1500R33HE3  
IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode  
IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode  
Vorläufige Daten / preliminary data  
V†Š» = 3300V  
I† ÒÓÑ = 1500A / I†ç¢ = 3000A  
Typische Anwendungen  
Typical Applications  
Chopper-Anwendungen  
Mittelspannungsantriebe  
Motorantriebe  
Chopper Applications  
Medium Voltage Converters  
Motor Drives  
Traktionsumrichter  
USV-Systeme  
Traction Drives  
UPS Systems  
Windgeneratoren  
Wind Turbines  
Elektrische Eigenschaften  
Electrical Features  
Große DC-Festigkeit  
High DC Stability  
Hohe Kurzschlussrobustheit, selbstlimitierender  
Kurzschlussstrom  
High Short Circuit Capability, Self Limiting Short  
Circuit Current  
Niedrige Schaltverluste  
Niedriges V†ŠÙÈÚ  
Low Switching Losses  
Low V†ŠÙÈÚ  
Sehr große Robustheit  
TÝÎ ÓÔ = 150°C  
Unbeatable Robustness  
TÝÎ ÓÔ = 150°C  
V†ŠÙÈÚ mit positivem Temperaturkoeffizienten  
V†ŠÙÈÚ with positive Temperature Coefficient  
Mechanische Eigenschaften  
Mechanical Features  
AlSiC Bodenplatte für erhöhte thermische  
Lastwechselfestigkeit  
AlSiC Base Plate for increased Thermal Cycling  
Capability  
Gehäuse mit CTI > 400  
IHM B Gehäuse  
Package with CTI > 400  
IHM B Housing  
Isolierte Bodenplatte  
Isolated Base Plate  
Module Label Code  
Barcode Code 128  
Content of the Code  
Digit  
Module Serial Number  
1 - 5  
Module Material Number  
Production Order Number  
Datecode (Production Year)  
Datecode (Production Week)  
6 - 11  
12 - 19  
20 - 21  
22 - 23  
DMX - Code  
prepared by: JB  
approved by: TS  
date of publication: 2010-07-16  
revision: 2.4  
material no: 30966  
1

与FZ1500R33HE3相关器件

型号 品牌 获取价格 描述 数据表
FZ1500R33HE3BPSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel, MODULE-9
FZ1500R33HL3 INFINEON

获取价格

IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode
FZ1500R33HL3BPSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel, MODULE-9
FZ1500R45KL3_B5 INFINEON

获取价格

10.4kV isolation
FZ15A05KN ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 15A I(C) | MODULE-Q
FZ15A10KN ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 15A I(C) | M:HL043HD5.2
FZ15P0G2 MOLEX

获取价格

D Subminiature Connector, 15 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
FZ15P0G3 MOLEX

获取价格

D Subminiature Connector, 15 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
FZ15P0RG1 MOLEX

获取价格

D Subminiature Connector, 15 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
FZ15P0RG2 MOLEX

获取价格

D Subminiature Connector, 15 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT