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FZ1200R45HL3_S7 PDF预览

FZ1200R45HL3_S7

更新时间: 2024-09-14 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
15页 672K
描述
VGE = 25 V

FZ1200R45HL3_S7 数据手册

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FZ1200R45HL3_S7  
IHM-B module  
IHM-B module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode  
Features  
• Electrical features  
- VCES = 4500 V  
- IC nom = 1200 A / ICRM = 2400 A  
- High DC stability  
- High short-circuit capability  
- High dynamic robustness  
- Low VCE,sat  
- Trench IGBT 3  
- VCE,sat with positive temperature coefficient  
• Mechanical features  
- AlSiC base plate for increased thermal cycling capability  
- Package with CTI > 600  
- IHM B housing  
- Isolated base plate  
- Standard housing  
Potential applications  
• High-power converters  
• Medium-voltage converters  
• Power transmission and distribution  
Product validation  
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068  
Description  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
Revision 1.10  
2021-11-02  

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TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 15A I(C) | MODULE-Q