生命周期: | Transferred | 包装说明: | MODULE-7 |
Reach Compliance Code: | unknown | 风险等级: | 5.56 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 1950 A |
集电极-发射极最大电压: | 1700 V | 配置: | COMPLEX |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
最高工作温度: | 125 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 9600 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1240 ns | 标称接通时间 (ton): | 460 ns |
VCEsat-Max: | 3.1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ1200R17KF6CB2V | ETC |
获取价格 |
IGBT Module | |
FZ1200R33HE3 | INFINEON |
获取价格 |
IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled3 diode | |
FZ1200R33HE3BPSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel, MODULE-9 | |
FZ1200R33KF1 | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 1.2KA I(C) | |
FZ1200R33KF2-B5 | EUPEC |
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Hochstzulassige Werte / Maximum rated values | |
FZ1200R33KF2C | EUPEC |
获取价格 |
IGBT-Wechselrichter / IGBT-inverter | |
FZ1200R33KF2C-B5 | EUPEC |
获取价格 |
IGBT-Wechselrichter / IGBT-inverter | |
FZ1200R33KF2CNOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 2000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9 | |
FZ1200R33KL2 | EUPEC |
获取价格 |
Hochstzulassige Werte / Maximum rated values | |
FZ1200R33KL2C | EUPEC |
获取价格 |
IGBT-modules |