是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X19 | 针数: | 28 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 16 weeks | 风险等级: | 5.04 |
其他特性: | UL APPROVED | 外壳连接: | ISOLATED |
集电极-发射极最大电压: | 650 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-XUFM-X19 | 元件数量: | 6 |
端子数量: | 19 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 320 ns | 标称接通时间 (ton): | 45 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS75R07U1E4 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
FS75R07U1E4BPSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
FS75R07W2E3_B11A | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 95A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT PACK | |
FS75R07W2E3B11ABOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 95A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT PACK | |
FS75R12KE3 | INFINEON |
获取价格 |
EconoPACK™2 1200 V, 75 A 六单元 IGBT 模块,采用第三代 IG | |
FS75R12KE3_B9 | INFINEON |
获取价格 |
IGBT-modules | |
FS75R12KE3B9BDLA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-26 | |
FS75R12KE3BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-28 | |
FS75R12KE3G | EUPEC |
获取价格 |
IGBT-Modules | |
FS75R12KE3G | INFINEON |
获取价格 |
EconoPACK?3?1200 V, 75 A 六单元 IGBT 模块,采用第三代 IG |