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FQP12N60J69Z PDF预览

FQP12N60J69Z

更新时间: 2024-11-16 14:50:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 532K
描述
Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

FQP12N60J69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:N雪崩能效等级(Eas):790 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):10.5 A最大漏源导通电阻:0.7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):42 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQP12N60J69Z 数据手册

 浏览型号FQP12N60J69Z的Datasheet PDF文件第2页浏览型号FQP12N60J69Z的Datasheet PDF文件第3页浏览型号FQP12N60J69Z的Datasheet PDF文件第4页浏览型号FQP12N60J69Z的Datasheet PDF文件第5页浏览型号FQP12N60J69Z的Datasheet PDF文件第6页浏览型号FQP12N60J69Z的Datasheet PDF文件第7页 
April 2000  
TM  
QFET  
FQP12N60  
600V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supply.  
10.5A, 600V, R  
= 0.7 @ V = 10 V  
DS(on) GS  
Low gate charge ( typical 42 nC)  
Low Crss ( typical 25 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
"
! "  
"
"
G !  
G
D
TO-220  
FQP Series  
S
!
S
Absolute Maximum Ratings  
 
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQP12N60  
600  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
10.5  
A
D
C
- Continuous (T = 100°C)  
6.7  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
42  
A
DM  
V
E
I
Gate-Source Voltage  
±30  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
790  
mJ  
A
AS  
10.5  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
18  
mJ  
AR  
dv/dt  
4.5  
Vns  
W
P
Power Dissipation (T = 25°C)  
180  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.43  
W/°C  
°C  
T , T  
-55 to +150  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
Typ  
--  
Max  
Units  
°CW  
°CW  
°CW  
R
R
R
0.7  
--  
θ
θ
θ
JC  
CS  
JA  
0.5  
--  
62.5  
©2000 Fairchild Semiconductor International  
Rev. A, April 2000  

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