生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 790 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 10.5 A | 最大漏源导通电阻: | 0.7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 42 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP12P10 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-100 V,-11.5 A,290 mΩ,TO | |
FQP12P10 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET | |
FQP12P20 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET | |
FQP12P20 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-200 V,-11.5 A,470 mΩ,TO | |
FQP12P20_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, M | |
FQP12P20J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, M | |
FQP13N06 | FAIRCHILD |
获取价格 |
60V N-Channel MOSFET | |
FQP13N06_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Met | |
FQP13N06J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Met | |
FQP13N06L | FAIRCHILD |
获取价格 |
60V LOGIC N-Channel MOSFET |