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FQP13N06 PDF预览

FQP13N06

更新时间: 2024-11-15 22:08:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 667K
描述
60V N-Channel MOSFET

FQP13N06 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N其他特性:FAST SWITCHING
雪崩能效等级(Eas):85 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):13 A
最大漏极电流 (ID):13 A最大漏源导通电阻:0.135 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):52 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQP13N06 数据手册

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May 2001  
TM  
QFET  
FQP13N06  
60V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as DC/DC  
converters, high efficiency switching for power  
management in portable and battery operated products.  
13A, 60V, R  
= 0.135@V = 10 V  
DS(on) GS  
Low gate charge ( typical 5.8 nC)  
Low Crss ( typical 15 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
D
!
"
! "  
"
"
!
G
G
D
S
TO-220  
FQP Series  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQP13N06  
Units  
V
V
I
Drain-Source Voltage  
60  
13  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
9.2  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
52  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
85  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
13  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
4.5  
mJ  
V/ns  
W
AR  
dv/dt  
7.0  
P
Power Dissipation (T = 25°C)  
45  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.3  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
Typ  
--  
Max  
3.35  
--  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
θJC  
θCS  
θJA  
0.5  
--  
62.5  
©2001 Fairchild Semiconductor Corporation  
Rev. A1. May 2001  

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