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FQP13N50CF PDF预览

FQP13N50CF

更新时间: 2024-11-16 03:37:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 1148K
描述
500V N-Channel MOSFET

FQP13N50CF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.74Is Samacsys:N
其他特性:FAST SWITCHING雪崩能效等级(Eas):530 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.54 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):195 W最大脉冲漏极电流 (IDM):52 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQP13N50CF 数据手册

 浏览型号FQP13N50CF的Datasheet PDF文件第2页浏览型号FQP13N50CF的Datasheet PDF文件第3页浏览型号FQP13N50CF的Datasheet PDF文件第4页浏览型号FQP13N50CF的Datasheet PDF文件第5页浏览型号FQP13N50CF的Datasheet PDF文件第6页浏览型号FQP13N50CF的Datasheet PDF文件第7页 
May 2006  
TM  
FRFET  
FQP13N50CF / FQPF13N50CF  
500V N-Channel MOSFET  
Features  
Description  
13A, 500V, RDS(on) = 0.54@VGS = 10 V  
Low gate charge (typical 43 nC)  
Low Crss (typical 20pF)  
These N-Channel enhancement mode power field effect transis-  
tors are produced using Fairchild’s proprietary, planar stripe,  
DMOS technology.  
This advanced technology has been especially tailored to mini-  
mize on-state resistance, provide superior switching perfor-  
mance, and withstand high energy pulse in the avalanche and  
commutation mode. These devices are well suited for high effi-  
cient switched mode power supplies and active power factor  
correction.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
Fast recovery body diode (typical 100ns)  
D
G
TO-220F  
FQPF Series  
TO-220  
FDP Series  
G D S  
G
D S  
S
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
FQP13N50CF FQPF13N50CF  
Unit  
Drain-Source Voltage  
Drain Current  
500  
V
A
A
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
13  
8
13*  
8*  
(Note 1)  
IDM  
Drain Current  
- Pulsed  
A
52  
52*  
VGSS  
EAS  
IAR  
Gate-Source voltage  
± 30  
530  
13  
V
mJ  
A
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
19.5  
4.5  
mJ  
V/ns  
W
Power Dissipation  
(TC = 25°C)  
195  
48  
- Derate above 25°C  
1.56  
0.39  
W/°C  
°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
FQP13N50CF FQPF13N50CF  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
0.64  
62.5  
2.58  
62.5  
RθJA  
© 2006 Fairchild Semiconductor Corporation  
FQP13N50CF / FQPF13N50CF Rev. A1  
1
www.fairchildsemi.com  

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