是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.74 | Is Samacsys: | N |
其他特性: | FAST SWITCHING | 雪崩能效等级(Eas): | 530 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 13 A | 最大漏极电流 (ID): | 13 A |
最大漏源导通电阻: | 0.54 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 195 W | 最大脉冲漏极电流 (IDM): | 52 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP140N03L | FAIRCHILD |
获取价格 |
30V LOGIC N-Channel MOSFET | |
FQP140N03LJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Me | |
FQP14N15 | TRIPATH |
获取价格 |
STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLO | |
FQP14N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQP14N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET | |
FQP14N30 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®, 300 V,14.4 A,290 mΩ,TO- | |
FQP14N30J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 14.4A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, M | |
FQP15P12 | FAIRCHILD |
获取价格 |
120V P-Channel MOSFET | |
FQP15P12 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-120 V,-15 A,0.2 Ω,DPAK | |
FQP16N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET |