Datasheet > FQP17P10

FQP17P10

更新时间： 2024-11-17 11:12:43

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	323K
描述
P 沟道，QFET® MOSFET，-100V，-16.5A，190mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQP17P10 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel, QFET⁾

-100 V, -16.5 A, 190 mW

FQP17P10

MAX

I MAX

DS(ON)

−100 V

0.19 W @ −10 V

−16.5 A

General Description

This P−Channel enhancement mode power MOSFET is produced

using onsemi’s proprietary planar stripe and DMOS technology. This

advanced MOSFET technology has been especially tailored to reduce

on−state resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are suitable

for switched mode power supplies, audio amplifier, DC motor control,

and variable switching power applications.

P−Channel MOSFET

Features

• −16.5 A, −100 V, R

= 190 mW (Max.) at V = −10 V,

DS(on)

I = −8.25 A

• Low Gate Charge (Typ. 30 nC)

• Low C (Typ. 100 pF)

rss

• 100% Avalanche Tested

• 175°C Maximum Junction Temperature Rating

• This is a Pb−Free Device

TO−220−3LD

CASE 340AT

MARKING DIAGRAM

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Drain−Source Voltage

Drain Current Continuous (T = 25°C)

Ratings

−100

−16.5

−11.7

−66

Unit

DSS

$Y&Z&3&K

FQP

17P10

Continuous (T = 100°C)

Drain Current Pulsed (Note 1)

GSS

Gate−Source Voltage

Single Pulse Avalanche Energy (Note 2)

Avalanche Current (Note 1)

580

−16.5

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)

V/ns

dv/dt

−6.0

100

= onsemi Logo

Power

Dissipation

(T = 25°C)

= Assembly Plant Code

= Data Code (Year & Week)

= Lot Code

Derate above 25°C

0.67

W/°C

°C

T , T

Operating and Storage Temperature

Range

−55 to

+175

STG

FQP17P10

= Specific Device Code

Maximum Lead Temperature for

Soldering, 1/8″ from Case for 5 Seconds

300

°C

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Device

FQP17P10

Package

Shipping

TO−220−3LD

(Pb−Free)

50 Units/

Tube

1. Repetitive rating: pulse−width limited by maximum junction temperature

2. L = 3.2 mH, I = −16.5 A, V = −25 V, R = 25 W, Starting T = 25°C

DSS

3. I ≤ −16.5 A, di/dt ≤ 300 A/ms, V ≤ BV

, Starting T = 25°C

Publication Order Number:

June, 2022 − Rev. 3

FQP17P10/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与FQP17P10相关器件

型号	品牌	获取价格	描述	数据表
FQP18N20V2	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQP18N50V2	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQP18N50V2	ROCHESTER	获取价格	18A, 500V, 0.265ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
FQP19N10	FAIRCHILD	获取价格	100V N-Channel MOSFET
FQP19N10J69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
FQP19N10L	FAIRCHILD	获取价格	100V LOGIC N-Channel MOSFET
FQP19N10-Q	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FQP19N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQP19N20	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，200 V，19.4 A，150 mΩ，TO-2
FQP19N20C	FAIRCHILD	获取价格	200V N-Channel MOSFET

与FQP17P10相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

13
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

35
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

FQP17P10

FQP17P10 数据手册

与FQP17P10相关器件

与FQP17P10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FQP17P10

FQP17P10 数据手册

与FQP17P10相关器件

与FQP17P10相关文章

您还可以找

您在本页遇到什么问题？