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FQP12P10 PDF预览

FQP12P10

更新时间： 2024-11-17 11:12:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 1224K
描述
功率 MOSFET，P 沟道，QFET®，-100 V，-11.5 A，290 mΩ，TO-220

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中文翻译

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FQP12P10 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：5 weeks风险等级：1.49
雪崩能效等级（Eas）：370 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：11.5 A
最大漏极电流 (ID)：11.5 A最大漏源导通电阻：0.29 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：75 W
最大脉冲漏极电流 (IDM)：46 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQP12P10 数据手册

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中文翻译

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