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FQP12P20 PDF预览

FQP12P20

更新时间： 2024-11-17 11:15:51
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 1343K
描述
功率 MOSFET，P 沟道，QFET®，-200 V，-11.5 A，470 mΩ，TO-220

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中文翻译

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FQP12P20 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：5 weeks风险等级：1.01
Samacsys Description：Trans MOSFET P-CH 200V 11.5A 3- TO-220雪崩能效等级（Eas）：810 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：11.5 A最大漏极电流 (ID)：11.5 A
最大漏源导通电阻：0.47 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：120 W最大脉冲漏极电流 (IDM)：46 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON

FQP12P20 数据手册

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中文翻译

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FQP13N06 FAIRCHILD

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FQP13N06_NL FAIRCHILD

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 		Power Field-Effect Transistor, 13A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Met
FQP13N06J69Z FAIRCHILD

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FQP13N06L FAIRCHILD

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 		60V LOGIC N-Channel MOSFET
FQP13N06L ONSEMI

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 		功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，13.6 A，110 mΩ，
FQP13N10 FAIRCHILD

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 		100V N-Channel MOSFET
FQP13N10 ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，100 V，12.8 A，180 mΩ，TO-2
FQP13N10J69Z FAIRCHILD

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 		Power Field-Effect Transistor, 12.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, M

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