是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-220 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.73 |
雪崩能效等级(Eas): | 810 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 11.5 A |
最大漏极电流 (ID): | 11.5 A | 最大漏源导通电阻: | 0.47 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 120 W |
最大脉冲漏极电流 (IDM): | 46 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDP8860 | FAIRCHILD |
类似代替 |
N-Channel PowerTrench MOSFET | |
STP60NF06 | STMICROELECTRONICS |
功能相似 |
N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F | |
STP55NF06 | STMICROELECTRONICS |
功能相似 |
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP12P20_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, M | |
FQP12P20J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, M | |
FQP13N06 | FAIRCHILD |
获取价格 |
60V N-Channel MOSFET | |
FQP13N06_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Met | |
FQP13N06J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Met | |
FQP13N06L | FAIRCHILD |
获取价格 |
60V LOGIC N-Channel MOSFET | |
FQP13N06L | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,逻辑电平,QFET®,60 V,13.6 A,110 mΩ, | |
FQP13N10 | FAIRCHILD |
获取价格 |
100V N-Channel MOSFET | |
FQP13N10 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,100 V,12.8 A,180 mΩ,TO-2 | |
FQP13N10J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, M |