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FQP12N60C_07

更新时间： 2024-11-16 03:37:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 1121K
描述
600V N-Channel MOSFET

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FQP12N60C_07 数据手册

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September 2007  
®
QFET  
FQP12N60C / FQPF12N60C  
600V N-Channel MOSFET  
Features  
Description  
•
•
•
•
•
•
•
12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V  
Low gate charge ( typical 48 nC)  
Low Crss ( typical 21pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
RoHS compliant  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies, active power factor  
correction, electronic lamp ballast based on half bridge  
topology.  
D
G
TO-220F  
FQPF Series  
TO-220  
FQP Series  
G D  
S
G
D S  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Unit  
FQP12N60C FQPF12N60C  
VDSS  
Drain-Source Voltage  
Drain Current  
600  
V
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
12  
7.4  
12*  
7.4*  
A
A
(Note 1)  
IDM  
Drain Current  
- Pulsed  
A
48  
48*  
VGSS  
EAS  
IAR  
Gate-Source voltage  
± 30  
870  
12  
V
mJ  
A
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
22.5  
4.5  
mJ  
V/ns  
Power Dissipation  
(TC = 25°C)  
225  
51  
W
- Derate above 25°C  
1.78  
0.41  
W/°C  
T
J, TSTG  
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
TL  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Unit  
FQP12N60C FQPF12N60C  
RθJC  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
°C/W  
0.56  
0.5  
2.43  
--  
RθJS  
RθJA  
°C/W  
°C/W  
62.5  
62.5  
©2007 Fairchild Semiconductor Corporation  
FQP12N60C / FQPF12N60C Rev. B1  
1
www.fairchildsemi.com  
1234567...10

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