FQD9N08LTM

更新时间： 2024-02-08 20:56:46

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飞兆/仙童 - FAIRCHILD		/
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数据手册

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FQD9N08LTM 数据手册

December 2000

QFET

FQD9N08 / FQU9N08

80V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

9.3A, 80V, R

= 0.21Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 5.9 nC)

Low Crss ( typical 13 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

high efficiency switching for DC/DC converters, and DC

motor control.

! "

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD9N08 / FQU9N08

Units

Drain-Source Voltage

7.4

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

4.68

29.6

± 25

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

7.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

2.5

V/ns

dv/dt

6.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.2

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

5.0

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A2, December 2000

12 3 4 5 6 7...9

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