Datasheet > FQA13N80-F109

FQA13N80-F109

更新时间： 2024-09-15 12:02:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1151K
描述
12.6 A, 800 V, RDS(on) = 750 mÎ© (Max.) @ VGS = 10 VID = 6.8 A

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FQA13N80-F109 数据手册

April 2013

FQA13N80_F109

N-Channel QFET^®MOSFET

800 V, 12.6 A, 750 mΩ

Description

Features

•

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor^®’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, active power factor correction

(PFC), and electronic lamp ballasts.

12.6 A, 800 V, R_DS(on)= 750 mΩ (Max.) @ V_GS= 10 V

I_D= 6.8 A

•

Low Gate Charge (Typ. 68 nC)

Low Crss (Typ. 30 pF)

100% Avalanche Tested

TO-3PN

Absolute Maximum Ratings

Symbol

Parameter

FQA13N80_F109

Unit

V_DSS

I_D

Drain-Source Voltage

800

12.6

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

8.0

(Note 1)

I_DM

Drain Current

50.4

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 30

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

1100

12.6

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

V/ns

4.0

300

- Derate above 25°C

2.38

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Unit

Symbol

Parameter

FQA13N80_F109

0.42

0.24

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Case-to-Sink, Typ.

°C/W

Thermal Resistance, Junction-to-Ambient, Max.

www.fairchildsemi.com

FQA13N80_F109 Rev. C0

12 3 4 5 6 7 8

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