Datasheet > FQA18N50V

FQA18N50V

更新时间： 2024-11-05 22:24:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	625K
描述
500V N-Channel MOSFET

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FQA18N50V 数据手册

QFET

FQA18N50V2

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficient switched mode power supplies,

active power factor correction, electronic lamp ballast

based on half bridge topology.

•

20A, 500V, R

= 0.265Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 42 nC)

Low Crss ( typical 11 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

TO-3P

FQA Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQA18N50V2

Units

Drain-Source Voltage

500

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

12.7

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

330

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

27.7

4.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

277

- Derate above 25°C

Operating and Storage Temperature Range

2.22

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

0.45

Units

°C/W

θJC

θCS

θJA

0.24

Rev. B, August 2002

12 3 4 5 6 7 8

中文翻译

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