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FQA24N60 PDF预览

FQA24N60

更新时间： 2024-11-06 11:14:51
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 1639K
描述
功率 MOSFET，N 沟道，QFET®，600V，23.5A，240 mΩ，TO-3P

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中文翻译

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FQA24N60 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：1.52雪崩能效等级（Eas）：1300 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (Abs) (ID)：23.5 A最大漏极电流 (ID)：23.5 A
最大漏源导通电阻：0.24 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：310 W
最大脉冲漏极电流 (IDM)：94 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQA24N60 数据手册

 浏览型号FQA24N60的Datasheet PDF文件第2页浏览型号FQA24N60的Datasheet PDF文件第3页浏览型号FQA24N60的Datasheet PDF文件第4页浏览型号FQA24N60的Datasheet PDF文件第5页浏览型号FQA24N60的Datasheet PDF文件第6页浏览型号FQA24N60的Datasheet PDF文件第7页 
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中文翻译

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FQA24N60 替代型号

型号 品牌 替代类型 描述 数据表
FQA24N50 FAIRCHILD

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FQA30N40 FAIRCHILD

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FQA11N90C FAIRCHILD

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 900V N-Channel MOSFET

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FQA28N15 FAIRCHILD

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FQA28N15 ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，150V，33A，90mΩ，TO-3P
FQA28N15_07 FAIRCHILD

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FQA28N15_F109 FAIRCHILD

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 		150V N-Channel MOSFET
FQA28N50 FAIRCHILD

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 		500V N-Channel MOSFET
FQA28N50 ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，500 V，28.4 A，160 mΩ，TO-3
FQA28N50F FAIRCHILD

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 		500V N-Channel MOSFET

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