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FQA33N10 PDF预览

FQA33N10

更新时间: 2024-09-13 12:46:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 567K
描述
100V N-Channel MOSFET

FQA33N10 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:TO-3P, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.71
Is Samacsys:N其他特性:FAST SWITCHING, AVALANCHE RATED
雪崩能效等级(Eas):430 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):36 A
最大漏极电流 (ID):36 A最大漏源导通电阻:0.052 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):163 W最大脉冲漏极电流 (IDM):144 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQA33N10 数据手册

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April 2000  
TM  
QFET  
FQA33N10  
100V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as audio amplifier,  
high efficiency switching DC/DC converters, and DC motor  
control.  
36A, 100V, R  
= 0.052@V = 10 V  
DS(on) GS  
Low gate charge ( typical 38 nC)  
Low Crss ( typical 62 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
D
!
"
! "  
"
G !  
"
TO-3P  
FQA Series  
!
S
G
D S  
Absolute Maximum Ratings  
 
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQA33N10  
100  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
36  
A
D
C
- Continuous (T = 100°C)  
25.5  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
144  
A
DM  
V
E
I
Gate-Source Voltage  
±25  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
430  
mJ  
A
AS  
36  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
16.3  
mJ  
V/ns  
W
AR  
dv/dt  
6.0  
P
Power Dissipation (T = 25°C)  
163  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.09  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
Typ  
--  
Max  
0.92  
--  
Units  
°CW  
°CW  
°CW  
R
R
R
θ
θ
θ
JC  
CS  
JA  
0.24  
--  
40  
©2000 Fairchild Semiconductor International  
Rev. A, April 2000  

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