FQA36P15

更新时间： 2024-09-12 22:25:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	659K
描述
150V P-Channel MOSFET

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中文翻译

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数据手册
替代型号

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FQA36P15 数据手册

QFET

FQA36P15

150V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

•

-36A, -150V, R

= 0.09Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 81 nC)

Low Crss ( typical 110 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

●

▶

▲

●

TO-3P

FQA Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQA36P15

-150

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

-36

- Continuous (T = 100°C)

-25.5

-144

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

1400

-36

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

29.4

V/ns

dv/dt

-5.0

Power Dissipation (T = 25°C)

294

- Derate above 25°C

Operating and Storage Temperature Range

1.96

W/°C

°C

T , T

-55 to +175

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

Units

°C/W

0.51

θJC

θCS

θJA

0.24

Rev. B, December 2003

12 3 4 5 6 7 8

中文翻译

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FQA36P15 替代型号

型号	品牌	替代类型	描述	数据表
FQA36P15_F109	FAIRCHILD	类似代替	150V P-Channel MOSFET

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