Datasheet > FQA19N60

FQA19N60

更新时间： 2024-11-07 11:12:59

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	1810K
描述
N 沟道 QFET® MOSFET 600V，18.5A，380mΩ

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FQA19N60 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	0.91
Is Samacsys：	N	雪崩能效等级（Eas）：	1150 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	600 V
最大漏极电流 (Abs) (ID)：	18.5 A	最大漏极电流 (ID)：	18.5 A
最大漏源导通电阻：	0.38 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	300 W
最大脉冲漏极电流 (IDM)：	74 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FQA19N60 数据手册

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与FQA19N60相关器件

型号	品牌	获取价格	描述	数据表
FQA20N40	FAIRCHILD	获取价格	400V N-Channel MOSFET
FQA22N30	FAIRCHILD	获取价格	300V N-Channel MOSFET
FQA22P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQA24N50	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQA24N50	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，500 V，24 A，200 mΩ，TO-3P
FQA24N50F	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQA24N50F_NL	FAIRCHILD	获取价格	暂无描述
FQA24N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQA24N60	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，600V，23.5A，240 mΩ，TO-3P
FQA26N30	FAIRCHILD	获取价格	300V N-Channel MOSFET

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