Datasheet > FQA17P10

FQA17P10

更新时间： 2024-11-05 22:09:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	677K
描述
100V P-Channel MOSFET

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FQA17P10 数据手册

QFET

FQA17P10

100V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

•

-18A, -100V, R

= 0.19Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 30 nC)

Low Crss ( typical 100 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

TO-3P

FQA Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQA17P10

-100

-18

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-12.7

-72

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

580

-18

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

-6.0

Power Dissipation (T = 25°C)

120

- Derate above 25°C

Operating and Storage Temperature Range

0.8

W/°C

°C

T , T

-55 to +175

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

1.25

Units

°C/W

θJC

θCS

θJA

0.24

Rev. B, August 2002

12 3 4 5 6 7 8

中文翻译

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FQA17P10 替代型号

型号	品牌	替代类型	描述	数据表
SFH9140	FAIRCHILD	功能相似	Advanced Power MOSFET

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