Datasheet > FQA11N90-F109

FQA11N90-F109

更新时间： 2024-09-15 12:36:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	460K
描述
N-Channel QFETÂ® MOSFET 900 V, 11.4 A, 960 mÎ©

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FQA11N90-F109 数据手册

November 2013

FQA11N90_F109

N-Channel QFET MOSFET

900 V, 11.4 A, 960 mΩ

Features

Description

•

11.4 A, 900 V, R_DS(on)= 960 mΩ (Max.) @ V_GS= 10 V,

_D= 5.7 A

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable

for switched mode power supplies, active power factor

correction (PFC), and electronic lamp ballasts.

•

Low Gate Charge (Typ. 72 nC)

Low Crss (Typ. 30 pF)

100% Avalanche Tested

RoHS compliant

TO-3PN

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted.

Symbol

V_DSS

Parameter

FQA11N90_F109

Unit

Drain to Source Voltage

Drain Current

900

11.4

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

I_D

7.2

I_DM

Drain Current

(Note 1)

45.6

V_GSS

E_AS

I_AR

Gate to Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

1000

11.4

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

4.0

(T_C= 25^oC)

- Derate above 25^oC

300

P_D

Power Dissipation

2.38

-55 to +150

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Unit

^oC/W

FQA11N90_F109

R_θJC

R_θJA

Thermal Resistance, Junction to Case, Max

Thermal Resistance, Junction to Ambient, Max

0.42

www.fairchildsemi.com

FQA11N90_F109 Rev. C1

12 3 4 5 6 7 8

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