Datasheet > FQA13N80_06

FQA13N80_06

更新时间： 2024-11-05 03:37:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	826K
描述
800V N-Channel MOSFET

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FQA13N80_06 数据手册

September 2006

QFET

FQA13N80

800V N-Channel MOSFET

Features

Description

•

12.6A, 800V, R_DS(on)= 0.75Ω @V_GS= 10 V

Low gate charge ( typical 68 nC)

Low Crss ( typical 30pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

TO-3P

FQA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FQA13N80

800

Units

V_DSS

I_D

Drain-Source Voltage

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

12.6

8.0

(Note 1)

I_DM

Drain Current

50.4

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 30

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

1100

12.6

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

V/ns

4.0

300

- Derate above 25°C

2.38

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.42

Units

°C/W

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

Thermal Resistance, Junction-to-Ambient

FQA13N80 Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7...9

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