5秒后页面跳转
FQA12P20 PDF预览

FQA12P20

更新时间: 2024-09-14 22:25:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 630K
描述
200V P-Channel MOSFET

FQA12P20 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3PN包装说明:TO-3PN, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.35
雪崩能效等级(Eas):810 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):12.6 A
最大漏极电流 (ID):12.6 A最大漏源导通电阻:0.47 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):50.4 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQA12P20 数据手册

 浏览型号FQA12P20的Datasheet PDF文件第2页浏览型号FQA12P20的Datasheet PDF文件第3页浏览型号FQA12P20的Datasheet PDF文件第4页浏览型号FQA12P20的Datasheet PDF文件第5页浏览型号FQA12P20的Datasheet PDF文件第6页浏览型号FQA12P20的Datasheet PDF文件第7页 
May 2000  
TM  
QFET  
FQA12P20  
200V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters.  
-12.6A, -200V, R  
= 0.47@V = -10 V  
DS(on) GS  
Low gate charge ( typical 31 nC)  
Low Crss ( typical 30 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
S
!
G!  
TO-3P  
FQA Series  
!
D
G
D S  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQA12P20  
-200  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
-12.6  
-7.9  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
-50.4  
± 30  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
810  
mJ  
A
-12.6  
15  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
AR  
dv/dt  
-5.5  
P
Power Dissipation (T = 25°C)  
150  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.2  
W/°C  
°C  
T , T  
-55 to +150  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
Typ  
--  
Max  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
0.83  
--  
θJC  
θCS  
θJA  
0.24  
--  
40  
©2000 Fairchild Semiconductor International  
Rev. B, May 2000  

FQA12P20 替代型号

型号 品牌 替代类型 描述 数据表
SFH9240 FAIRCHILD

类似代替

Advanced Power MOSFET

与FQA12P20相关器件

型号 品牌 获取价格 描述 数据表
FQA13N50 FAIRCHILD

获取价格

500V N-Channel MOSFET
FQA13N50C FAIRCHILD

获取价格

500V N-Channel MOSFET
FQA13N50C_F109 FAIRCHILD

获取价格

Power Field-Effect Transistor, 13.5A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, M
FQA13N50CF FAIRCHILD

获取价格

500V N-Channel MOSFET
FQA13N50CF ONSEMI

获取价格

功率 MOSFET,N 沟道,QFET®,FRFET®,500 V,15 A,480 mΩ
FQA13N50CF_07 FAIRCHILD

获取价格

500V N-Channel MOSFET
FQA13N50CF_F109 FAIRCHILD

获取价格

500V N-Channel MOSFET
FQA13N50CF_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 15A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Met
FQA13N50C-F109 ONSEMI

获取价格

N-Channel QFET® MOSFET
FQA13N80 FAIRCHILD

获取价格

800V N-Channel MOSFET