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FGH50T65UPD PDF预览

FGH50T65UPD

更新时间: 2024-10-01 12:29:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
10页 344K
描述
650 V, 50 A Field Stop Trench IGBT

FGH50T65UPD 数据手册

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April 2013  
FGH50T65UPD  
650 V, 50 A Field Stop Trench IGBT  
Features  
Maximum Junction Temperature : TJ = 175oC  
Positive Temperaure Co-efficient for easy Parallel Operating  
High Current Capability  
General Description  
Using innovative field stop trench IGBT technology, Fairchild®’s  
new series of field stop trench IGBTs offer optimum perfor-  
mance for solar inverter, UPS, welder, and digital power genera-  
tor where low conduction and switching losses are essential.  
Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 50 A  
100% of Parts Tested ILM(2)  
High Input Impedance  
Tightened Parameter Distribution  
Applications  
RoHS Compliant  
Short-circuit Ruggedness > 5us @25oC  
Solar Inverter, UPS, Welder, Digital Power Generator  
Telecom, ESS  
E
C
C
G
G
COLLECTOR  
(FLANGE)  
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
Unit  
VCES  
VGES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
650  
V
V
25  
Collector Current  
@ TC = 25oC  
@ TC = 100oC  
100  
A
IC  
Collector Current  
50  
A
ICM (1)  
ILM (2)  
IF  
Pulsed Collector Current  
Clamped Inductive Load Current  
Diode Forward Current  
150  
A
@ TC = 25oC  
@ TC = 25oC  
@ TC = 100oC  
150  
A
60  
A
Diode Forward Current  
30  
150  
A
IFM(1)  
PD  
Pulsed Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Short Circuit Withstand Time  
Operating Junction Temperature  
Storage Temperature Range  
A
@ TC = 25oC  
@ TC = 100oC  
@ TC = 25oC  
340  
W
W
us  
oC  
oC  
170  
SCWT  
TJ  
5
-55 to +175  
-55 to +175  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive rating: Pulse width limited by max. junction temperature  
2: Ic = 150A, Vce = 400V, Rg = 10Ω  
Thermal Characteristics  
Symbol  
RθJC(IGBT)  
RθJC(Diode)  
RθJA  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Typ.  
Max.  
0.44  
1.2  
Unit  
oC/W  
oC/W  
-
-
-
40  
oC/W  
©2012 Fairchild Semiconductor Corporation  
FGH50T65UPD Rev. C0  
1
www.fairchildsemi.com  

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