April 2013
FGH50T65UPD
650 V, 50 A Field Stop Trench IGBT
Features
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Maximum Junction Temperature : TJ = 175oC
Positive Temperaure Co-efficient for easy Parallel Operating
High Current Capability
General Description
Using innovative field stop trench IGBT technology, Fairchild®’s
new series of field stop trench IGBTs offer optimum perfor-
mance for solar inverter, UPS, welder, and digital power genera-
tor where low conduction and switching losses are essential.
Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 50 A
100% of Parts Tested ILM(2)
High Input Impedance
Tightened Parameter Distribution
Applications
RoHS Compliant
Short-circuit Ruggedness > 5us @25oC
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Solar Inverter, UPS, Welder, Digital Power Generator
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Telecom, ESS
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
650
V
V
25
Collector Current
@ TC = 25oC
@ TC = 100oC
100
A
IC
Collector Current
50
A
ICM (1)
ILM (2)
IF
Pulsed Collector Current
Clamped Inductive Load Current
Diode Forward Current
150
A
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
150
A
60
A
Diode Forward Current
30
150
A
IFM(1)
PD
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
A
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
340
W
W
us
oC
oC
170
SCWT
TJ
5
-55 to +175
-55 to +175
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2: Ic = 150A, Vce = 400V, Rg = 10Ω
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.44
1.2
Unit
oC/W
oC/W
-
-
-
40
oC/W
©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
1
www.fairchildsemi.com