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FF400R17KF6CB2 PDF预览

FF400R17KF6CB2

更新时间: 2024-09-12 23:51:59
品牌 Logo 应用领域
其他 - ETC 双极性晶体管
页数 文件大小 规格书
8页 102K
描述
IGBT Module

FF400R17KF6CB2 数据手册

 浏览型号FF400R17KF6CB2的Datasheet PDF文件第2页浏览型号FF400R17KF6CB2的Datasheet PDF文件第3页浏览型号FF400R17KF6CB2的Datasheet PDF文件第4页浏览型号FF400R17KF6CB2的Datasheet PDF文件第5页浏览型号FF400R17KF6CB2的Datasheet PDF文件第6页浏览型号FF400R17KF6CB2的Datasheet PDF文件第7页 
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FF 400 R 17 KF6C B2  
1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode  
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
1700  
V
TC = 80 °C  
IC,nom.  
IC  
400  
650  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
TC=25°C, Transistor  
ICRM  
Ptot  
VGES  
IF  
800  
3,3  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
+/- 20V  
400  
800  
45  
Dauergleichstrom  
DC forward current  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
kA2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
4
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Transistor / Transistor  
IC = 400A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
-
2,6  
3,1  
3,1  
3,6  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 400A, VGE = 15V, Tvj = 125°C  
Gate-Schwellenspannung  
gate threshold voltage  
IC = 30mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
4,5  
5,5  
4,8  
27  
6,5  
V
Gateladung  
gate charge  
VGE = -15V ... +15V  
QG  
µC  
nF  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
Cies  
-
-
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
ICES  
1,3  
VCE = 1700V, VGE = 0V, Tvj = 25°C  
VCE = 1700V, VGE = 0V, Tvj = 125°C  
-
-
0,01  
5
1
mA  
mA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
40  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
400  
nA  
prepared by: Alfons Wiesenthal  
date of publication: 13.07.2000  
revision: 2 (Series)  
approved by: Chr. Lübke; 11.08.2000  
1(8)  
FF400R17KF6CB2  

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