生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X11 |
Reach Compliance Code: | compliant | 风险等级: | 5.51 |
其他特性: | UL RECOGNIZED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 675 A | 集电极-发射极最大电压: | 1200 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | JESD-30 代码: | R-XUFM-X11 |
元件数量: | 2 | 端子数量: | 11 |
最低工作温度: | -40 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 740 ns | 标称接通时间 (ton): | 290 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF450R12ME4B11BPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FF450R12ME4EB11BPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF450R12ME4P | INFINEON |
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Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF450R12ME4P_B11 | INFINEON |
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TIM | |
FF450R12ME4PB11BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF450R12ME4PBOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF450R12ME7_B11 | INFINEON |
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PressFIT | |
FF450R17IE4 | INFINEON |
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PrimePACK?2 Modul und NTC | |
FF450R17IE4BOSA2 | INFINEON |
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Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 | |
FF450R17ME3 | INFINEON |
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EconoDUAL3 module with trench/fieldstop IGBT3 and EmCon3 diode |