是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X7 | 针数: | 10 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.57 | 最大集电极电流 (IC): | 1800 A |
集电极-发射极最大电压: | 1700 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1800 ns | 标称接通时间 (ton): | 650 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF450R17ME3 | INFINEON |
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EconoDUAL3 module with trench/fieldstop IGBT3 and EmCon3 diode | |
FF450R17ME4 | INFINEON |
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EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled3 diode | |
FF450R17ME4_B11 | INFINEON |
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EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT | |
FF450R17ME4P | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FF450R17ME4P_B11 | INFINEON |
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TIM | |
FF450R17ME4PB11BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, MODULE-11 | |
FF450R17ME7_B11 | INFINEON |
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PressFIT | |
FF450R33T3E3 | INFINEON |
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Phase leg | |
FF450R33T3E3_B5 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FF450R33T3E3BPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, |