Datasheet > 晶体管 > IGBT> FF450R17ME4P

FF450R17ME4P

更新时间： 2024-11-05 12:59:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
8页	310K
描述
Insulated Gate Bipolar Transistor,

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技术参数
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FF450R17ME4P 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.57	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

FF450R17ME4P 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FF450R17ME4

EconoDUAL™3 Modul mit Trench/Feldstop IGBT4 und Emitter Controlled³ Diode

EconoDUAL™3 module with trench/fieldstop IGBT4 and Emitter Controlled³ diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1700

Kollektor-Dauergleichstrom

DC-collector current

T† = 100°C, TÝÎ = 175°C

T† = 25°C, TÝÎ = 175°C

I† ÒÓÑ

I†

450

600

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

900

2500

+/-20

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 175°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 450 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C V†Š ÙÈÚ

TÝÎ = 150°C

1,95 2,30

2,35

2,45

Gate-Schwellenspannung

gate threshold voltage

I† = 18,0 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

V•ŠÚÌ

Q•

5,2

5,8

4,60

1,7

6,4

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

36,0

1,15

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

3,0

Gate-Emitter Reststrom

gate-emitter leakage current

400 nA

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 450 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 3,3 Â

TÝÎ = 25°C

tÁ ÓÒ

0,21

0,26

µs

TÝÎ = 125°C

TÝÎ = 150°C

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 450 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 3,3 Â

TÝÎ = 25°C

tØ

0,11

0,12

µs

TÝÎ = 125°C

TÝÎ = 150°C

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 450 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 3,3 Â

TÝÎ = 25°C

tÁ ÓËË

0,80

0,95

1,00

µs

TÝÎ = 125°C

TÝÎ = 150°C

Fallzeit (induktive Last)

fall time (inductive load)

I† = 450 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 3,3 Â

TÝÎ = 25°C

tË

0,30

0,50

0,60

µs

TÝÎ = 125°C

TÝÎ = 150°C

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 450 A, V†Š = 900 V, L» = 80 nH TÝÎ = 25°C

V•Š = ±15 V, di/dt = 3900 A/µs (TÝÎ=150°C) TÝÎ = 125°C

105

135

145

EÓÒ

R•ÓÒ = 3,3 Â

TÝÎ = 150°C

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 450 A, V†Š = 900 V, L» = 80 nH TÝÎ = 25°C

V•Š = ±15 V, du/dt = 3000 V/µs (TÝÎ=150°C) TÝÎ = 125°C

98,0

155

170

EÓËË

R•ÓËË = 3,3 Â

TÝÎ = 150°C

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 1000 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

t« ù 10 µs, TÝÎ = 150°C

2300

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

RÚÌœ†

RÚÌ†™

0,06 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

0,029

K/W

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: CU

approved by: MK

date of publication: 2011-03-01

revision: 2.4

12 3 4 5 6 7 8

中文翻译

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