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FF500R25KF1 PDF预览

FF500R25KF1

更新时间: 2024-11-17 23:52:03
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页数 文件大小 规格书
9页 112K
描述
IGBT Module

FF500R25KF1 数据手册

 浏览型号FF500R25KF1的Datasheet PDF文件第2页浏览型号FF500R25KF1的Datasheet PDF文件第3页浏览型号FF500R25KF1的Datasheet PDF文件第4页浏览型号FF500R25KF1的Datasheet PDF文件第5页浏览型号FF500R25KF1的Datasheet PDF文件第6页浏览型号FF500R25KF1的Datasheet PDF文件第7页 
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FF 500 R 25 KF1  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
2500  
V
TC = 80 °C  
IC,nom.  
IC  
500  
800  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t
P = 1 ms, TC = 80°C  
ICRM  
1000  
5,2  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
500  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
t
P = 1 ms  
IFRM  
1000  
100  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
kA2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
5
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 500A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
-
3,0  
3,8  
3,5  
4,3  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 500A, VGE = 15V, Tvj = 125°C  
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 40mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
4,3  
5,3  
9
6,3  
V
Gateladung  
gate charge  
V
GE = -15V ... +15V  
QG  
-
-
-
-
-
-
-
µC  
nF  
nF  
mA  
nA  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
VCE = 2500V, VGE = 0V, Tvj = 25°C  
Cies  
48  
4
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
ICES  
IGES  
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
-
10  
400  
Gate-Emitter Reststrom  
gate-emitter leakage current  
V
CE = 0V, VGE = 20V, Tvj = 25°C  
-
prepared by: Oliver Schilling  
approved by: Thomas Schütze  
date of publication: 01.09.2001  
revision: 3  
1
FF5_1@3.xls  

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