是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X11 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 2.08 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 675 A | 集电极-发射极最大电压: | 1200 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | JESD-30 代码: | R-XUFM-X11 |
元件数量: | 2 | 端子数量: | 11 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 740 ns |
标称接通时间 (ton): | 290 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF450R12ME4P | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF450R12ME4P_B11 | INFINEON |
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TIM | |
FF450R12ME4PB11BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF450R12ME4PBOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF450R12ME7_B11 | INFINEON |
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PressFIT | |
FF450R17IE4 | INFINEON |
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PrimePACK?2 Modul und NTC | |
FF450R17IE4BOSA2 | INFINEON |
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Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 | |
FF450R17ME3 | INFINEON |
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EconoDUAL3 module with trench/fieldstop IGBT3 and EmCon3 diode | |
FF450R17ME4 | INFINEON |
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EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled3 diode | |
FF450R17ME4_B11 | INFINEON |
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EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT |