Datasheet > FF450R12KE7

FF450R12KE7

更新时间： 2024-11-26 17:01:31

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
15页	662K
描述
62 mm 1200 V, 450 A dual low sat & fast trench IGBT module?with?TRENCHSTOP? IGBT7?and emitter controlled diode.

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FF450R12KE7 数据手册

FF450R12KE7

62 mm C-Series module

™

62 mm C-Series module with TRENCHSTOP IGBT7 and emitter controlled 7 diode

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 450 A / I_CRM= 900 A

- TRENCHSTOP^TMIGBT7

- V_CE,satwith positive temperature coeﬀicient

- Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder

• Mechanical features

- 4 kV AC 1 min insulation

- High creepage and clearance distances

- High power density

- Isolated base plate

- Package with CTI > 400

- Standard housing

Potential applications

• Servo drives

• Solar applications

• UPS systems

• Motor drives

• High-power converters

• Commercial agriculture vehicles

• Three-level applications

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2023-06-16

12 3 4 5 6 7...15

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型号	品牌	获取价格	描述	数据表
FF450R12KE7_E	INFINEON	获取价格	62 mm 1200 V, 450 A common emitter?IGBT module with TRENCHSTOP? IGBT7 and emitter controll
FF450R12KT4	INFINEON	获取价格	62mm C-series module with fast trench/fieldstop IGBT4 and Emitter Controlled diode
FF450R12KT4P	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
FF450R12ME3	INFINEON	获取价格	EconoDUAL module with trench/fieldstop IGBT3 and EmCon High Efficiency diode
FF450R12ME4	INFINEON	获取价格	EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC
FF450R12ME4_B11	INFINEON	获取价格	Insulated Gate Bipolar Transistor
FF450R12ME4B11BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
FF450R12ME4B11BPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
FF450R12ME4EB11BPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
FF450R12ME4P	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11