Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 401 R 17 KF6C B2
vorläufige Daten
preliminary data
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj = 25°C
VCES
1700
V
TC = 80 °C
TC = 25 °C
IC,nom.
IC
400
650
A
A
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P = 1 ms, TC = 80°C
ICRM
800
3,1
A
kW
V
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
400
800
45
Dauergleichstrom
DC forward current
IF
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P = 1 ms
IFRM
A
Grenzlastintegral der Diode
I2t - value, Diode
I2t
kA2s
kV
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
Isolations-Prüfspannung
insulation test voltage
VISOL
4
Charakteristische Werte / Characteristic values
min. typ. max.
Transistor / Transistor
IC = 400A, VGE = 15V, Tvj = 25°C
VCE sat
-
-
2,6
3,1
3,1
3,6
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 400A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
I
C = 30mA , VCE = VGE, Tvj = 25°C
VGE(th)
4,5
5,5
4,8
27
6,5
V
Gateladung
gate charge
V
GE = -15V ... +15V
QG
-
-
-
-
µC
nF
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, VGE = 0V, Tvj = 25°C
Cres
ICES
-
-
1,3
-
-
nF
5
mA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: Alfons Wiesenthal
date of publication:28.03.2001
revision: 2 (preliminary)
approved by: Christoph Lübke; 12.04.2001
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FF401R17KF6CB2_V.xls