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FF450R12KE4 PDF预览

FF450R12KE4

更新时间: 2024-09-13 10:32:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管双极性晶体管局域网
页数 文件大小 规格书
8页 278K
描述
62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode

FF450R12KE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.5Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):520 A
集电极-发射极最大电压:1200 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X7
元件数量:2端子数量:7
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2400 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称断开时间 (toff):800 ns标称接通时间 (ton):325 ns
VCEsat-Max:2.15 VBase Number Matches:1

FF450R12KE4 数据手册

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Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF450R12KE4  
62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode  
62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
chstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 100°C, TÝÎ = 175°C  
T† = 25°C, TÝÎ = 175°C  
I† ÒÓÑ  
I†  
450  
520  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
900  
2400  
+/-20  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 175°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 450 A, V•Š = 15 V  
I† = 450 A, V•Š = 15 V  
I† = 450 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C V†Š ÙÈÚ  
TÝÎ = 150°C  
1,75 2,15  
2,00  
2,05  
V
V
V
Gate-Schwellenspannung  
gate threshold voltage  
I† = 17,0 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
V•ŠÚÌ  
Q•  
5,2  
5,8  
3,70  
1,9  
6,4  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
CØþÙ  
I†Š»  
I•Š»  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
28,0  
1,10  
nF  
nF  
Rückwirkungskapazität  
reverse transfer capacitance  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0 mA  
400 nA  
Gate-Emitter Reststrom  
gate-emitter leakage current  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 450 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 1,0 Â  
TÝÎ = 25°C  
tÁ ÓÒ  
0,20  
0,25  
0,27  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 450 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 1,0 Â  
TÝÎ = 25°C  
tØ  
0,045  
0,05  
0,055  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 450 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 1,0 Â  
TÝÎ = 25°C  
tÁ ÓËË  
0,50  
0,60  
0,62  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 450 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 1,0 Â  
TÝÎ = 25°C  
tË  
0,10  
0,16  
0,18  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 450 A, V†Š = 600 V, L» = 30 nH TÝÎ = 25°C  
V•Š = ±15 V, di/dt = 9000 A/µs (TÝÎ=150°C) TÝÎ = 125°C  
19,0  
30,0  
36,0  
mJ  
mJ  
mJ  
EÓÒ  
EÓËË  
R•ÓÒ = 1,0 Â  
TÝÎ = 150°C  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 450 A, V†Š = 600 V, L» = 30 nH TÝÎ = 25°C  
V•Š = ±15 V, du/dt = 4000 V/µs (TÝÎ=150°C) TÝÎ = 125°C  
33,0  
50,0  
56,0  
mJ  
mJ  
mJ  
R•ÓËË = 1,0 Â  
TÝÎ = 150°C  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 800 V  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
t« ù 10 µs, TÝÎ = 150°C  
1800  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT / per IGBT  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
RÚÌœ†  
RÚ̆™  
0,062 K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
0,031  
K/W  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Martin Knecht  
date of publication: 2008-11-13  
revision: 2.2  
approved by: Wilhelm Rusche  
1

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