是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X7 | 针数: | 7 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.5 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 520 A |
集电极-发射极最大电压: | 1200 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2400 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 800 ns | 标称接通时间 (ton): | 325 ns |
VCEsat-Max: | 2.15 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF450R12KE4_E | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
FF450R12KE4P | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FF450R12KE7 | INFINEON |
获取价格 |
62 mm 1200 V, 450 A dual low sat & fast trench IGBT module?with?TRENCHSTOP? IGBT7?and emit | |
FF450R12KE7_E | INFINEON |
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62 mm 1200 V, 450 A common emitter?IGBT module with TRENCHSTOP? IGBT7 and emitter controll | |
FF450R12KT4 | INFINEON |
获取价格 |
62mm C-series module with fast trench/fieldstop IGBT4 and Emitter Controlled diode | |
FF450R12KT4P | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FF450R12ME3 | INFINEON |
获取价格 |
EconoDUAL module with trench/fieldstop IGBT3 and EmCon High Efficiency diode | |
FF450R12ME4 | INFINEON |
获取价格 |
EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC | |
FF450R12ME4_B11 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
FF450R12ME4B11BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11 |