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FDW2601NZ_08 PDF预览

FDW2601NZ_08

更新时间: 2024-11-23 03:36:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
11页 536K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

FDW2601NZ_08 数据手册

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May 2008  
FDW2601NZ  
tmM  
®
Dual N-Channel 2.5V Specified PowerTrench  
MOSFET  
Features  
General Description  
! 8.2A, 30V  
r
= 0.015, V = 4.5V  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced PowerTrench process that has  
been especially tailored to minimize the on-state resistance  
and yet maintain low gate charge for superior switching  
performance. These devices are well suited for portable  
electronics applications.  
DS(ON)  
GS  
r
= 0.020, V = 2.5V  
GS  
DS(ON)  
! Extended V range (±12 V) for battery applications  
GS  
! HBM ESD Protection Level of 3.5kV Typical (note 3)  
! High performance trench technology for extremely low  
r
DS(ON)  
! Low profile TSSOP-8 package  
Applications  
! Load switch  
! Battery charge  
! Battery disconnect circuits  
D1  
D2  
G2  
S2  
S2  
D2  
G1  
S1  
S1  
D1  
G1  
G2  
S1  
S2  
Pin 1  
TSSOP-8  
©2008 Fairchild Semiconductor Corporation  
FDW2601NZ Rev. A1  
www.fairchildsemi.com  
1

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