Datasheet > FDWS9508L-F085

FDWS9508L-F085

更新时间： 2024-11-20 11:15:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	399K
描述
P 沟道 PowerTrench® MOSFET -40V，-80A，4.9mΩ

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FDWS9508L-F085 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel, Logic

Level, POWERTRENCH⁾

DSS

MAX

I MAX

DS(ON)

−40 V

4.9 mW @ −10 V

−80 A

-40 V, -80 A, 4.9 mW

FDWS9508L-F085

Features

• Typ R

• Typ Q

= 3,6 mW at V = −10 V; I = −80 A

GS D

DS(on)

= 82 nC at V = −10 V; I = −80 A

g(tot)

• UIS Capability

• Wettable Flanks for Automatic Optical Inspection (AOI)

• AEC−Q101 Qualified

P−Channel MOSFET

• These Devices are Pb−Free and are RoHS Compliant

Applications

Top

Bottom

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Electrical Power Steering

• Integrated Starter/Alternator

• Distributed Power Architectures and VRM

• Primary Switch for 12 V Systems

Pin 1

DFNW8

CASE 507AU

MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)

MARKING DIAGRAM

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Ratings

−40

Unit

DSS

AYWWWL

FDWS

9508L

Drain Current (T = 25°C)

Continuous (V = −10 V) (Note 1)

−80

(see Fig. 4)

Pulsed

Single Pulse Avalanche Energy

(Note 2)

211

= Assembly Location

= Year

= Work Week

= Assembly Lot

= Device Code

Power Dissipation

214

Derate Above 25°C

1.43

W/°C

FDWS

9508L

T , T

Operating and Storage Temperature

−55 to +175

°C

STG

Thermal Resistance

(Junction to case)

0.7

°C/W

(Note: Microdot may be in either location)

Maximum Thermal Resistance

(Junction to Ambient) (Note 3)

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by wirebond configuration

ORDERING INFORMATION

†

Device

Package

Shipping

2. Starting Tj = 25°C, L = 0.1 mH, I = −65 A, V

= −40 V during inductor

FDWS9508L−F085

DFNW8

(Power56)

(Pb−Free)

3000 /

Tape & Reel

charging and V = 0 V during time in avalanche

3. R

is the sum of the junction−to−case and case−to−ambient thermal

resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

is determined by the user’s board design. The maximum rating presented

here is based on mounting on a 1 in pad of 2 oz copper.

Publication Order Number:

October, 2021 − Rev. 3

FDWS9508L−F085/D

12 3 4 5 6 7

中文翻译

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与FDWS9508L-F085相关器件

型号	品牌	获取价格	描述	数据表
FDWS9509L-F085	ONSEMI	获取价格	P 沟道，逻辑电平，Power Trench® MOSFET，-40V，-65A，8mΩ
FDWS9510L-F085	ONSEMI	获取价格	P 沟道逻辑电平 Power Trench® MOSFET-40V，-50A，13.5mΩ
FDWS9511L-F085	ONSEMI	获取价格	P 沟道，逻辑电平，Power Trench® MOSFET，-40V，-30A，20.5
FDWS9520L-F085	ONSEMI	获取价格	双 P 沟道，PowerTrench® MOSFET，-40 V，-20 A，12.5mΩ
FDX1125B	ETC	获取价格	FIBER OPTIC TRANSCEIVER
FDX1125D	ETC	获取价格	FIBER OPTIC TRANSCEIVER
FDY1002PZ	FAIRCHILD	获取价格	Dual P-Channel (?1.5 V) Specified PowerTrench?MOSFET
FDY1002PZ	ONSEMI	获取价格	双 P 沟道，(-1.5 V) 指定，PowerTrench? MOSFET，-20V，-
FDY100PZ	FAIRCHILD	获取价格	Single P-Channel (-2.5V) Specified PowerTrench MOSFET
FDY100PZ	ONSEMI	获取价格	P 沟道，(-2.5 V) 指定，PowerTrench® MOSFET，-20V，-0.

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