Datasheet > FDW9926

FDW9926

更新时间： 2024-11-22 22:40:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	114K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

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FDW9926 数据手册

July 2003

FDW9926A

Dual N-Channel 2.5V Specified PowerTrench^ÒMOSFET

General Description

Features

This N-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild's Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 10V).

4.5 A, 20 V.

R_DS(ON)= 32 mW @ V_GS= 4.5 V

R_DS(ON)= 45 mW @ V_GS= 2.5 V

Optimized for use in battery circuit applications

Extended V_GSSrange (±10V) for battery applications

Applications

Battery protection

Load switch

High performance trench technology for extremely

low R_DS(ON)

Power management

Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±10

4.5

(Note 1a)

P_D

Total Power Dissipation

(Note 1a)

(Note 1b)

1.0

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

125

208

R_qJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

9926A

FDW9926A

13’’

12mm

3000 units

FDW9926A Rev D (W)

Ó2003 Fairchild Semiconductor Corporation

12 3 4 5

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