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FDY102PZ PDF预览

FDY102PZ

更新时间: 2024-11-23 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 209K
描述
Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 

FDY102PZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-523F
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.31
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.83 A最大漏极电流 (ID):0.83 A
最大漏源导通电阻:0.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):30 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

FDY102PZ 数据手册

 浏览型号FDY102PZ的Datasheet PDF文件第2页浏览型号FDY102PZ的Datasheet PDF文件第3页浏览型号FDY102PZ的Datasheet PDF文件第4页浏览型号FDY102PZ的Datasheet PDF文件第5页浏览型号FDY102PZ的Datasheet PDF文件第6页浏览型号FDY102PZ的Datasheet PDF文件第7页 
February 2010  
FDY102PZ  
tm  
Single P-Channel (1.5 V) Specified PowerTrench® MOSFET  
–20 V, –0.83 A, 0.5  
Features  
General Description  
  Max rDS(on) = 0.5 at VGS = –4.5 V, ID = –0.83 A  
  Max rDS(on) = 0.7 at VGS = –2.5 V, ID = –0.70 A  
  Max rDS(on) = 1.2 at VGS = –1.8 V, ID = –0.43 A  
  Max rDS(on) = 1.8 at VGS = –1.5 V, ID = –0.36 A  
  HBM ESD protection level = 1400 V (Note 3)  
  RoHS Compliant  
This Single P-Channel MOSFET has been designed using  
Fairchild Semiconductor’s advanced Power Trench process to  
optimize the rDS(on)@VGS = –1.5 V.  
Application  
  Li-Ion Battery Pack  
G
S
1
2
S
G
3
D
D
SC89-3  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
–20  
Units  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
8
(Note 1a)  
–0.83  
–1.0  
ID  
A
Power Dissipation  
Power Dissipation  
Operating and Storage Junction Temperature Range  
(Note 1a)  
(Note 1b)  
0.625  
0.446  
–55 to +150  
PD  
W
TJ, TSTG  
°C  
Thermal Characteristics  
RJA  
RJA  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1b)  
200  
280  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
FDY102PZ  
Package  
SC89-3  
Reel Size  
Tape Width  
8 mm  
Quantity  
3000 units  
E
7 ”  
©2010 Fairchild Semiconductor Corporation  
FDY102PZ Rev.B2  
www.fairchildsemi.com  
1

FDY102PZ 替代型号

型号 品牌 替代类型 描述 数据表
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