Datasheet > FDY302NZ

FDY302NZ

更新时间： 2024-01-19 17:50:16

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	379K
描述
N 沟道 2.5V 额定 PowerTrench® MOSFET 20V，0.6A，0.3Ω

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FDY302NZ 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SC-89
包装说明：	ROHS COMPLIANT, SC-89, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.37
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	0.6 A	最大漏源导通电阻：	0.3 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-F3
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
认证状态：	COMMERCIAL	表面贴装：	YES
端子面层：	MATTE TIN	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDY302NZ 数据手册

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