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FDY4000CZ PDF预览

FDY4000CZ

更新时间: 2024-11-23 03:12:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关光电二极管PC
页数 文件大小 规格书
9页 451K
描述
Complementary N & P-Channel PowerTrench MOSFET

FDY4000CZ 数据手册

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August 2006  
FDY4000CZ  
Complementary N & P-Channel PowerTrench®  
MOSFET  
tm  
Features  
General Description  
Q1: N-Channel  
This Complementary N & P-Channel MOSFET has been  
designed using Fairchild Semiconductor’s advanced Power  
Trench® process to optimize the rDS(ON) @ VGS= 2.5V and  
specify the rDS(ON) @ VGS = 1.8V.  
„ Max rDS(on) =0.7at VGS = 4.5V, ID = 600mA  
„ Max rDS(on) =0.85at VGS = 2.5V, ID = 500mA  
„ Max rDS(on) =1.25at VGS = 1.8V, ID =150 mA  
Applications  
Q2: P-Channel  
„ Level shifting  
„ Max rDS(on) =1.2at VGS = -4.5V, ID = -350mA  
„ Max rDS(on) =1.6at VGS = -2.5V, ID = -300mA  
„ Max rDS(on) =2.7at VGS = -1.8V, ID = -150mA  
„ ESD protection diode (note 3)  
„ Power Supply Converter Circuits  
„ Load/Power Switching Cell Phones, Pagers  
„ RoHS Compliant  
6
5
4
3
S2  
4
5
6
D2  
G1  
S1  
2
1
G2  
D1  
1
2
3
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Q1  
20  
Q2  
-20  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
V
V
±12  
600  
1000  
±8  
(Note 1a)  
-350  
-1000  
ID  
mA  
625  
446  
Power Dissipation (Steady State)  
(Note 1a)  
(Note 1b)  
PD  
mW  
TJ, TSTG  
Operating and Storage Jaunting Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
RθJA  
RθJA  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1b)  
200  
280  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
E
FDY4000CZ  
SC89-6  
7”  
8mm  
3000units  
©2006 Fairchild Semiconductor Corporation  
FDY4000CZ Rev. B  
1
www.fairchildsemi.com  

FDY4000CZ 替代型号

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