FDY4000CZ

更新时间： 2024-01-02 13:32:13

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
9页	451K
描述
Complementary N & P-Channel PowerTrench MOSFET

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数据手册

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FDY4000CZ 数据手册

August 2006

FDY4000CZ

Complementary N & P-Channel PowerTrench^®

MOSFET

Features

General Description

Q1: N-Channel

This Complementary N & P-Channel MOSFET has been

designed using Fairchild Semiconductor’s advanced Power

Trench^®process to optimize the r_DS(ON)@ V_GS= 2.5V and

specify the r_DS(ON)@ V_GS= 1.8V.

Max r_DS(on)=0.7Ω at V_GS= 4.5V, I_D= 600mA

Max r_DS(on)=0.85Ω at V_GS= 2.5V, I_D= 500mA

Max r_DS(on)=1.25Ω at V_GS= 1.8V, I_D=150 mA

Applications

Q2: P-Channel

Level shifting

Max r_DS(on)=1.2Ω at V_GS= -4.5V, I_D= -350mA

Max r_DS(on)=1.6Ω at V_GS= -2.5V, I_D= -300mA

Max r_DS(on)=2.7Ω at V_GS= -1.8V, I_D= -150mA

ESD protection diode (note 3)

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

RoHS Compliant

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

-20

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±12

600

1000

±8

(Note 1a)

-350

-1000

I_D

625

446

Power Dissipation (Steady State)

(Note 1a)

(Note 1b)

P_D

T_J, T_STG

Operating and Storage Jaunting Temperature Range

-55 to 150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

200

280

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDY4000CZ

SC89-6

7”

8mm

3000units

FDY4000CZ Rev. B

www.fairchildsemi.com

12 3 4 5 6 7...9

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