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FDY6342L

更新时间： 2024-11-24 11:14:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关
页数 文件大小 规格书
5页 252K
描述
集成式负载开关

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FDY6342L 技术参数

是否无铅： 不含铅生命周期：Contact Manufacturer
包装说明：VSON, FL6,.047,20Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.41内置保护：OVER VOLTAGE; TRANSIENT
驱动器位数：1接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDSO-N6JESD-609代码：e3
长度：1.6 mm湿度敏感等级：1
标称负供电电压：-8 V功能数量：1
端子数量：6封装主体材料：PLASTIC/EPOXY
封装代码：VSON封装等效代码：FL6,.047,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：8 V
认证状态：Not Qualified座面最大高度：0.6 mm
子类别：Peripheral Drivers标称供电电压：8 V
表面贴装：YES技术：MOS
端子面层：Tin (Sn)端子形式：NO LEAD
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

FDY6342L 数据手册

 浏览型号FDY6342L的Datasheet PDF文件第2页浏览型号FDY6342L的Datasheet PDF文件第3页浏览型号FDY6342L的Datasheet PDF文件第4页浏览型号FDY6342L的Datasheet PDF文件第5页 
FDY6342L  
Integrated Load Switch  
General Description  
This device is particularly suited for compact power management in  
portable electronic equipment where 2.5 V to 8 V input and 0.83 A  
output current capability are needed. This load switch integrates a  
small N−Channel power MOSFET (Q1) that drives a large P−Channel  
power MOSFET (Q2) in one tiny SC89−6 package.  
www.onsemi.com  
Features  
• Max r  
• Max r  
• Max r  
• Max r  
= 0.5 ꢀ at V = 4.5 V, I = –0.83 A  
GS D  
DS(on)  
DS(on)  
DS(on)  
DS(on)  
= 0.7 ꢀ at V = 2.5 V, I = –0.70 A  
GS  
D
= 1.2 ꢀ at V = 1.8 V, I = –0.43 A  
GS  
D
= 1.8 ꢀ at V = 1.5 V, I = –0.36 A  
GS  
D
• Control MOSFET (Q1) Includes Zener Protection for ESD  
Ruggedness (>4 kV Human Body Model)  
• High Performance Trench Technology for Extremely Low r  
DS(on)  
• Compact Industry Standard SC89−6 Surface Mount Package  
• This Device is Pb−Free and is RoHS Compliant  
Applications  
• Power Management  
• Load Switch  
MOSFET MAXIMUM RATINGS T = 25°C Unless Otherwise Noted  
A
Symbol  
VIN  
Parameter  
Gate to Source Voltage (Q2)  
Gate to Source Voltage (Q1)  
Rating  
8
Units  
6
5
4
V
V
A
VON/OFF  
ILoad  
–0.5 to 8  
0.83  
1
2
3
Load Current  
−Continuous (Note 2)  
−Pulsed (Note 2)  
1.0  
SOT−563  
CASE 419BH  
PD  
Power Dissipation (Note 1a)  
Power Dissipation (Note 1b)  
0.625  
W
0.446  
TJ, TSTG  
Operating and Storage Junction  
Temperature Range  
–55 to +150  
°C  
MARKING DIAGRAM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
H&2  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Rating  
Units  
°C/W  
RθJA  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
200  
H
&2  
= Device Code (FDY6342L)  
= Date Code (Year & Week)  
RθJA  
Thermal Resistance, Junction to Ambient  
(Note 1b)  
280  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
April, 2019 − Rev. 3  
FDY6342L/D  
12345

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