FDY302NZ

更新时间： 2024-01-11 19:02:37

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	218K
描述
FDY302NZ Single N-Channel 2.5V Specified PowerTrenchÂ® MOSFET

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FDY302NZ 数据手册

July 2006

FDY302NZ

Single N-Channel 2.5V Specified PowerTrench^®MOSFET

General Description

Features

This Single N-Channel MOSFET has been designed

using Fairchild Semiconductor’s advanced Power

Trench process to optimize the R_DS(ON)@ V_GS= 2.5V.

• 600 mA, 20 V R_DS(ON)= 300 mΩ @ V_GS= 4.5 V

_DS(ON)= 500 mΩ @ V_GS= 2.5 V

Applications

• ESD protection diode (note 3)

• RoHS Compliant

• Li-Ion Battery Pack

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Unit

V_DS

V_GS

I_D

Drain-Source Voltage

600

1000

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

P_D

Power Dissipation (Steady State)

(Note 1a)

(Note 1b)

625

446

T_J, T_STG

Operating and Storage Junction Temperature

Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient ^{(Note 1a)}

Thermal Resistance, Junction-to-Ambient ^{(Note 1b)}

200

280

R_θJA

°C/W

R_θJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDY302NZ

7 ’’

8 mm

3000 units

www.fairchildsemi.com

FDY302NZ Rev A

12 3 4 5 6

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