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NVE4153NT1G PDF预览

NVE4153NT1G

更新时间： 2024-11-27 01:20:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 77K
描述
Small Signal MOSFET

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中文翻译

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NVE4153NT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,Reach Compliance Code：compliant
Factory Lead Time：8 weeks风险等级：0.9
JESD-609代码：e3湿度敏感等级：1
端子面层：Tin (Sn)

NVE4153NT1G 数据手册

 浏览型号NVE4153NT1G的Datasheet PDF文件第2页浏览型号NVE4153NT1G的Datasheet PDF文件第3页浏览型号NVE4153NT1G的Datasheet PDF文件第4页浏览型号NVE4153NT1G的Datasheet PDF文件第5页浏览型号NVE4153NT1G的Datasheet PDF文件第6页 
NTA4153N, NTE4153N,  
NVA4153N, NVE4153N  
Small Signal MOSFET  
20 V, 915 mA, Single N−Channel  
with ESD Protection, SC−75 and SC−89  
http://onsemi.com  
Features  
• Low R  
Improving System Efficiency  
DS(on)  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
• Low Threshold Voltage, 1.5 V Rated  
• ESD Protected Gate  
0.127 W @ 4.5 V  
0.170 W @ 2.5 V  
0.242 W @ 1.8 V  
0.500 W @ 1.5 V  
20 V  
915 mA  
• NV Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
• Pb−Free Packages are Available  
3
N−Channel MOSFET  
Applications  
• Load/Power Switches  
• Power Supply Converter Circuits  
• Battery Management  
• Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.  
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value Units  
V
DSS  
20  
V
V
3
3
3
Gate−to−Source Voltage  
V
GS  
6.0  
SC−75 / SOT−416  
CASE 463  
Drain  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
State  
I
D
915  
660  
300  
mA  
2
2
A
1
1
STYLE 5  
XX MG  
T = 85°C  
A
G
Power Dissipation  
(Note 1)  
Steady State  
P
D
mW  
SC−89  
CASE 463C  
1
2
Gate Source  
Pulsed Drain Current  
t =10 ms  
I
1.3  
A
p
DM  
XX  
M
= Device Code  
= Date Code*  
= Pb−Free Package  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
T
STG  
G
Continuous Source Current (Body Diode)  
I
S
280  
260  
mA  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
°C  
T
L
SC−75, SC−89  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Value Units  
Gate  
1
2
Junction−to−Ambient − Steady State (Note 1)  
R
°C/W  
q
JA  
SC−75 / SOT−416  
SC−89  
416  
400  
3
Drain  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Source  
1. Surface mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces).  
Top View  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 4 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
December, 2014 − Rev. 7  
NTA4153N/D  
 
123456

中文翻译

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NVE4153NT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTE4153NT1G ONSEMI

类似代替

 Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75
NTA4153NT1G ONSEMI

功能相似

 Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75
NTK3134NT1G ONSEMI

功能相似

 Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723

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