NTA4153NT1G

更新时间： 2024-02-10 11:26:04

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	69K
描述
Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89

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NTA4153NT1G 数据手册

NTA4153N, NTE4153N

Small Signal MOSFET

20 V, 915 mA, Single N−Channel

with ESD Protection, SC−75 and SC−89

Features

http://onsemi.com

• Low R

Improving System Efficiency

DS(on)

• Low Threshold Voltage, 1.5 V Rated

• ESD Protected Gate

TYP

I MAX

(BR)DSS

DS(on)

0.127 W @ 4.5 V

0.170 W @ 2.5 V

0.242 W @ 1.8 V

0.500 W @ 1.5 V

• Pb−Free Packages are Available

20 V

915 mA

Applications

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Management

N−Channel MOSFET

• Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

DSS

Gate−to−Source Voltage

6.0

Continuous Drain

Current (Note 1)

Steady T = 25°C

915

660

300

MARKING DIAGRAM &

PIN ASSIGNMENT

State

T = 85°C

Power Dissipation

(Note 1)

Steady State

SC−75 / SOT−416

CASE 463

Drain

Pulsed Drain Current

t =10 ms

1.3

STYLE 5

XX MG

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

SC−89

CASE 463C

Continuous Source Current (Body Diode)

280

260

Gate Source

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

= Device Code

= Date Code*

= Pb−Free Package

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value Units

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

Junction−to−Ambient − Steady State (Note 1)

°C/W

SC−75 / SOT−416

SC−89

416

400

SC−75, SC−89

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Gate

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

Drain

Source

Top View

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2007

Publication Order Number:

March, 2007 − Rev. 5

NTA4153N/D

12 3 4 5 6

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NTA4153NT1G 替代型号

型号	品牌	替代类型	描述	数据表
NTA4153NT1	ONSEMI	类似代替	Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75
NTE4153NT1G	ONSEMI	类似代替	Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75
NTK3134NT1G	ONSEMI	功能相似	Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723

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NTA985A	RENESAS	获取价格	1.5A, 150V, PNP, Si, POWER TRANSISTOR
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